Microwave Detection Using Two-Atom-Thick Self-Switching Diodes Based on Quantum Simulations and Advanced Circuit Models

نویسندگان

چکیده

In this article, a two-atom-thick diode based on 2-D materials is presented for microwave detection. The consists of molybdenum disulfide monolayer/graphene monolayer heterojunction transferred onto silicon/silicon dioxide substrate and patterned by means nanolithography techniques to obtain geometrical self-switching diode. interaction between the two monolayers gives rise double-stage device, which behaves as back-to-back in [−3, +3] V voltage range, tunnel when exceeding +10 V. can be reproduced at wafer scale, thanks its CMOS compatibility ease fabrication, it used efficiently detector up 10 GHz, with best performance around ISM 2.45-GHz band. Starting from advanced quantum simulations predict dc behavior single heterojunction-based channel, was fabricated fully characterized experimentally. Lastly, rigorous equivalent circuit model provided, relies measured scattering parameters high frequencies allows treating embedded into coplanar waveguide line two-port lossy device. This way, device exploited circuit-based numerical tools design complex front ends.

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ژورنال

عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques

سال: 2022

ISSN: ['1557-9670', '0018-9480']

DOI: https://doi.org/10.1109/tmtt.2021.3129520